Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling

Hoang Anh Tuan, Nguyen Thi Hai Yen


The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory.


metal-insulator transition; phase diagram; disordered Hubbard model

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K. Byczuk, M.Ulmke, and D.Vollhardt, Phys. Rev. Lett. 90 (2003) 196403.

K. Byczuk, M.Ulmke, Eur. Phys. J. B 45 (2005) 449.

K. W. Kim et al., Phys. Rev. B 71 (2005) 125104.

P. Lombardo, J. C. Guisiano, R. Hayn, Physica B 403 (2008) 3485.

K. Elk, Ann. Phys. (Leipzig) 33 (1976) 275.

B. Velicky, S. Kirkpatrick, and H. Ehremreich, Phys. Rev. 175 (1968)747.

A. Garg, H. R. Krishnamurthy, and M. Randeria, Phys. Rev. Lett. 97 (2006) 046403.

L. Craro, et al., Phys. Rev. B 78 (2008) 075121.

K. Byczuk, et al., Phys. Rev. B 79 (2009) 121103 (R).

A. T. Hoang, J. Phys.: Cond. Matt. 22 (2010) 095602.

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