Temperature dependent magnetization of the two band model for diluted magnetic semiconductors

Vu Kim Thai, Hoang Anh Tuan


The temperature dependent magnetization of a two band model for diluted magnetic semiconductors as a function of magnetic coupling constant, hopping parameters and carrier densities is calculated by using the coherent potential approximation.  It is shown that the degree of overlapping of the impurity bands  and carrier density are crucial parameters determining the magnetization behavior of the system.


magnetization; diluted magnetic semiconductors; two-band model; coherent potential approximation

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DOI: https://doi.org/10.15625/0868-3166/24/2/4043 Display counter: Abstract : 368 views. PDF : 75 views.


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